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top view 8 1 2 3 4 5 6 7 d d d d g s a s s a absolute maximum ratings symbol units v ds v v gs continuous output current t a = 25c a (v gs 4.5v) t l = 90c i dm t a = 25c t l = 90c t j , t stg c i s i sm thermal resistance symbol typ max units r ja ??? 50 r jl ??? 20 w a c/w maximum junction-to-ambient maximum junction-to-lead pulsed source current 2.5 50 2.5 -55 to 150 i d p d power dissipation continuous source current (body diode) parameter parameter drain-to-source voltage gate-to-source voltage pulsed drain current junction & storage temperature range 3.0 irf7811av 10.8 100 30 20 11.8

v ds 30 v r ds(on) max (@v gs = 4.5v) 14 q g (typical) 17 nc i d (@t a = 25c) 10.8 a m features benefits industry-standard pinout so-8 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability form quantity tube/bulk 95 IRF7811AVPBF-1 tape and reel 4000 irf7811avtrpbf-1 package type standard pack orderable part number IRF7811AVPBF-1 so-8 base part number

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! notes: repetitive rating; pulse width limited by max. junction temperature. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board, t < 10 sec. typ = measured - q oss typical values of r ds (on) measured at v gs = 4.5v, q g , q sw and q oss measured at v gs =5.0v, i f = 15a. " ##
$%& '( electrical characteristics parameter symbol min typ max units drain-to-source breakdown voltage v (br)dss 30 ??? ??? v static drain-to-source on-resistance r ds(on) ??? 11 14 m gate threshold voltage v gs(th) 1.0 ??? 3.0 v ??? ??? 50 a ??? ??? 20 a ??? ??? 100 ma gate-to-source leakage current i gss ??? ??? 100 na total gate charge, control fet q g ??? 17 26 nc total gate charge, synch fet q g ??? 14 21 v gs = 5.0v, v ds < 100mv pre-vth gate-to-source charge q gs1 ??? 3.4 ??? post-vth gate-to-source charge q gs2 ??? 1.6 ??? gate-to-drain ("miller") charge q gd ??? 5.1 ??? switch charge (q gs2 + q gd )q sw ??? 6.7 ??? output charge q oss ??? 8.1 12 v ds = 16v, v gs = 0 gate resistance r g 0.5 ??? 4.4 turn-on delay time t d(on) ??? 8.6 ??? ns rise time t r ??? 21 ??? turn-off delay time t d(off) ??? 43 ??? fall time t f ??? 10 ??? input capacitance c iss ??? 1801 ??? pf output capacitance c oss ??? 723 ??? reverse transfer capacitance c rss ??? 46 ??? diode characteristics parameter symbol min typ max units diode forward voltage v sd ??? ??? 1.3 v reverse recovery charge (with parallel schottsky) v ds = v gs , i d = 250 a v ds = 30v, v gs = 0v v gs = 20v v ds = 24v, i d = 15a, v gs = 5.0v v ds = 24v, v gs = 0v conditions v gs = 0v, i d = 250 a v gs = 4.5v, i d = 15a di/dt = 700a/ s , (with 10bq040) v dd = 16v, v gs = 0v, i d = 15a v gs = 5.0v v dd = 16v i d = 15a clamped inductive load di/dt = 700a/ s v dd = 16v, v gs = 0v, i d = 15a t j = 25c, i s = 15a ,v gs = 0v v ds = 24v, v gs = 0v, t j = 100c v gs = 0v v ds = 10v conditions drain-to-source leakage current i dss v ds = 16v, i d = 15a q rr ??? 43 ??? nc nc ??? 50 ??? q rr reverse recovery charge

! 0 5 10 15 20 0 2 4 6 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 15a 1 10 100 v ds , drain-to-source voltage (v) 0 500 1000 1500 2000 2500 3000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.1 1 10 100 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v = 15v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.1 1 10 100 0.3 0.6 0.9 1.2 1.5 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j figure 1. normalized on-resistance vs. temperature figure 2. gate-to-source voltage vs. typical gate charge figure 3. typical rds(on) vs. gate-to-source voltage figure 4. typical capacitance vs. drain-to-source voltage figure 5. typical transfer characteristics figure 6. typical source-drain diode forward voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 15a 3.0 6.0 9.0 12.0 15.0 v gs, gate -to -source voltage (v) 0.008 0.010 0.012 0.014 0.016 0.018 0.020 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) i d = 15a

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! figure 7. maximum effective transient thermal impedance, junction-to-ambient 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) *+(#
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50 ohms probe 125ns 50 u 5 uh schottky -6a vdd 16vz500mw 50 u 450 450 mic4452bm repetition rate:100hz 8v switching time w aveforms 10% 90% v ds v gs t d( on) t f( v) t d(o ff) t r (v )

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! so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070] dat e code (yww) xxxx international rectifier logo f 7101 y = last digit of the year part number lot code ww = week e xample: t his is an irf7101 (mos f et ) p = de s i gnat e s l e ad- f r e e product (optional) a = as s e mb l y s i t e code note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

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! 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level so-8

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